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PD - 96192A
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRG6I330UPBF
Key Parameters
330 1.30 250 150 V V A C
VCE min VCE(ON) typ. @ IC = 28A IRP max @ TC= 25C TJ max
C
G E
E C G
n-channel
G Gate C Collector
TO-220AB Full-Pak
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw
Max.
30 28 15 250 43 17 0.34 -40 to + 150 300 10lbxin (1.1Nxm)
Units
V A
c
W W/C C
N
Thermal Resistance
RJC Junction-to-Case
d
Parameter
Typ.
---
Max.
2.9
Units
C/W
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IRG6I330UPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVCES V(BR)ECS VCES/TJ
Min. Typ. Max. Units
--- --- 0.29 1.13 1.30 1.43 1.80 2.38 2.10 --- -12 2.0 10 40 150 --- --- 94 86 36 39 32 120 55 37 33 159 95 --- 943 1086 --- --- --- --- 1.55 --- --- --- --- 5.0 V V V
Conditions
VGE = 0V, ICE = 1 mA
Collector-to-Emitter Breakdown Voltage 330 Emitter-to-Collector Breakdown Voltagee 30 Breakdown Voltage Temp. Coefficient --- --- ---
VGE = 0V, ICE = 1 A V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 15A VGE = 15V, ICE = 28A V VGE = 15V, ICE VGE = 15V, ICE
VCE(on)
Static Collector-to-Emitter Voltage
--- --- --- 2.6 --- --- --- ---
VGE = 15V, ICE VGE = 15V, ICE = 70A, TJ = 150C VCE = VGE, ICE = 500A
e e = 40A e = 70A e = 120A e
VGE(th) VGE(th)/TJ ICES
e
Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current
IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE
Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse
--- --- --- --- --- --- --- --- --- --- --- --- --- --- 100 --- ---
--- mV/C VCE = 330V, VGE = 0V 20 VCE = 330V, VGE = 0V, TJ = 100C --- A VCE = 330V, VGE = 0V, TJ = 125C 200 VCE = 330V, VGE = 0V, TJ = 150C --- 100 -100 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ns J ns nA S nC VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15Ve IC = 25A, VCC = 196V ns RG = 10, L=200H, LS= 150nH TJ = 25C IC = 25A, VCC = 196V RG = 10, L=200H, LS= 150nH TJ = 150C VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V
ESD Cies Coes Cres LC LE
Human Body Model Machine Model Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance --- --- --- --- ---
VCC = 240V, RG= 5.1, TJ = 100C Class 2 (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 2275 --- 108 --- pF VCE = 30V 75 4.5 7.5 --- --- nH --- = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13
Notes: Half sine wave with duty cycle = 0.05, ton=2sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%.
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IRG6I330UPBF
500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
ICE (A)
500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
400
400
ICE (A)
300
300
200
200
100
100
0 0 2 4 6 8 10
0 0 2 4 6 8 10
VCE (V)
VCE (V)
Fig 1. Typical Output Characteristics @ 25C
500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
Fig 2. Typical Output Characteristics @ 75C
500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V
400
400
ICE (A)
300
200
ICE (A)
300
200
100
100
0 0 2 4 6 8 10
0 0 2 4 6 8 10
VCE (V)
VCE (V)
Fig 3. Typical Output Characteristics @ 125C
500
Fig 4. Typical Output Characteristics @ 150C
25 IC = 25A 20
400
TJ = 150C
T J = 25C
VCE (V)
ICE (A)
300
15 TJ = 25C 10 TJ = 150C
200
100
5
0 0 2 4 6 8 10 12 14 16 18 VGE (V)
0 5 10 VGE (V) 15 20
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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IRG6I330UPBF
30 25
Repetitive Peak Current (A)
260 240 220 200 180 160 140 120 100 80 60 40 20 ton= 2s Duty cycle <= 0.05 Half Sine Wave
20
IC (A)
15 10 5 0 0 25 50 75 T C (C) 100 125 150
0 25 50 75 100 125 150 Case Temperature (C)
Fig 7. Maximum Collector Current vs. Case Temperature
1100 1050 1000 V CC = 240V L = 220nH C = variable 100C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1100 1000 L = 220nH C = 0.4F
100C
Energy per Pulse (J)
950 900 850 800 750 700 650 600 150 160 170 180 190 200 210 220 230 IC, Peak Collector Current (A) 25C
Energy per Pulse (J)
900 800 700 600 500 195 200 205 210 215 220 225 230 235 240 VCC, Collector-to-Supply Voltage (V)
25C
Fig 9. Typical EPULSE vs. Collector Current
1400 V CC = 240V 1200
Energy per Pulse (J)
Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage
1000
L = 220nH t = 1s half sine
C= 0.4F
100
10sec
1000
IC (A)
C= 0.3F 800 600 C= 0.2F
100sec
10
1msec
1
400 200 25 50 75 100 125 150 TJ, Temperature (C)
Tc = 25C Tj = 150C Single Pulse
0.1 1 10 VCE (V) 100 1000
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
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IRG6I330UPBF
100000
VGE, Gate-to-Emitter Voltage (V)
VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + Cgc
16 14 12 10 8 6 4 2 0 IC = 25A V CES = 240V V CES = 150V V CES = 60V
10000
Capacitance (pF)
1000
Cies
100
Coes Cres
10 0 50 100 150 200
0
20
40
60
80
100
VCE, Collector-toEmitter-Voltage(V)
Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
0.1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.11889 0.35666 1.09829 1.32616
i (sec)
0.000045 0.001841 0.128114 2.452
1
2
3
4
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG6I330UPBF
A
RG
DRIVER L
C
PULSE A
VCC
B
PULSE B
RG
Ipulse DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy IC Current
0
L DUT 1K VCC
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
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IRG6I330UPBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
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TO-220AB Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without Data and specifications subject to change without notice. limitation, we have not qualified our product for medical use or This product has been designed for the Industrial market. applications involving hi-reliability applications. Customers are Qualification Standards can be found on IR's Web site. encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2009
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